Onsemi EliteSiC MOSFET promises cooler, more efficient power for demanding designs

Engineers pushing the limits of EV, solar or industrial power stages get a new flagship SiC MOSFET option from Onsemi.

Onsemi EliteSiC MOSFET 1200 V 40 m? aims to become the cool-running heart of your next high-power design.

Byline: Alex Carter, ad-hoc-news, June 16, 2026

Onsemi EliteSiC MOSFET 1200 V 40 m? is pitched as a flagship power transistor for engineers who are fighting every watt of loss in electric vehicles, solar inverters, and industrial drives. If your silicon parts are running out of thermal headroom, this device targets you directly.

Flagship silicon carbide for when silicon hits its limits

If your existing IGBT or superjunction MOSFET stages are running hot, the EliteSiC MOSFET 1200 V 40 m? is built to push you beyond those constraints. Onsemi focuses this device on traction inverters, onboard chargers, high power supplies, and solar or storage inverters.

Silicon carbide allows higher switching frequencies at lower switching losses than many comparable silicon devices. In practice that can mean smaller magnetics, lighter cooling hardware, and more compact power stages, especially in electric vehicles and rooftop solar systems where every cubic centimeter matters.

Designers chase lower loss and simpler thermal design

The 40 m? typical on resistance at 25 °C gives engineers a starting point for significantly lower conduction losses in high current phases. As temperatures rise, the SiC technology is designed to keep R_DS(on) behavior predictable, which simplifies worst case thermal calculations in safety critical drives.

Onsemi positions EliteSiC gate charge and output capacitance values to support faster edges with manageable EMI. That balance matters if you are trying to shrink a motor drive enclosure or power module without paying the penalty in filtering and shielding cost.

Onsemi’s market push and what it means for investors

The EliteSiC MOSFET 1200 V 40 m? lands as automakers and industrial OEMs continue shifting toward wide bandgap devices across platforms. Longer range EVs, higher efficiency charging, and compact industrial cabinets all depend on better power density at the semiconductor level.

Company On Semiconductor, listed as NASDAQ:ON with ISIN US6821891035, has identified power semiconductors for EVs, renewable energy, and automation as a core growth engine. Flagship SiC parts like this MOSFET underline that narrative for both design engineers and shareholders watching the long term mix shift.

Onsemi EliteSiC MOSFET 1200 V 40 m? key facts

• Type: Silicon carbide N channel power MOSFET for high voltage stages

• Voltage rating: 1200 V class

• Typical R_DS(on): 40 m? at 25 °C (device dependent)

• Target use: EV traction inverters, onboard chargers, industrial drives, solar and storage inverters

• Manufacturer: Onsemi (ON Semiconductor)

• Price: varies by distributor and volume; check current component pricing

• Availability: in stock at several major electronics distributors at the time of writing

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Editorial note: This article is independent journalistic coverage. Product data and availability may change after publication. Amazon links are affiliate links; ad-hoc-news may receive a commission if you purchase, which helps support our reporting.