Navitas Semiconductor Rides Twin Tailwinds: India GaN Launch and SiC Milestone Propel Stock 18% Higher

Navitas shares surge 18% as Cyient launches GaN ICs in India and CEO touts SiC chip validation, driving Navitas 2.0 high-performance pivot.

Navitas Semiconductor has found itself at the centre of two major developments that together underline the breadth of its strategic overhaul. An 18% surge in the company’s shares on Monday came as news broke that partner Cyient Semiconductors had unveiled India’s first gallium-nitride power integrated circuit family, built on Navitas technology. At the same time, CEO Chris Allexandre disclosed via LinkedIn that early customer feedback on the company’s next-generation silicon-carbide chips has been “very exciting,” signalling real traction in the high-performance segments Navitas has been targeting.

The Cyient partnership introduces seven GaN power devices housed in DPAK packages. Each component integrates driver, regulation and protection functions alongside built-in EMI management and current sensing. Rated for applications up to 650 V, the devices target USB-PD chargers, laptop adapters, AC/DC power supplies, AI data centres and electric-vehicle charging infrastructure. Sampling is scheduled to begin by June 2026, with a longer-term aim of domestic manufacturing in India under New Delhi’s “Make in India” programme. The deal also designates Cyient as a second source for selected GaN devices already in volume production, a move that reduces supply-chain concentration — a factor institutional investors have been weighing more heavily amid heightened geopolitical tensions.

On the silicon-carbide front, Navitas is winning early validation for its 1.2 kV chips built on fifth-generation GeneSiC technology. Initial units have been shipped to customers, and Allexandre described the reception as “very exciting.” These chips are aimed at AI data centres, power grids and industrial systems — precisely the markets where energy demand is climbing fastest. The company had previously showcased its wider pipeline at major industry events: at NVIDIA GTC 2026 it demonstrated an 800V-to-6V power board using GaNFast technology for AI data centres, and at APEC 2026 it presented a 250 kW solid-state transformer co-developed with the EPFL that uses 3,300 V and 1,200 V GeneSiC devices.

Both initiatives form part of the internal “Navitas 2.0” strategy, under which the company is exiting the mobile and consumer segments to focus entirely on high-performance applications. The pivot is already showing up in the numbers. In the first quarter of 2026, Navitas posted sequential revenue growth of 18%, to $8.6 million, while its high-performance markets — AI data centres, network infrastructure and industrial electrification — expanded roughly 35% year over year and now account for the bulk of total sales. Gross margin also improved during the period. For the current quarter, CFO Tonya Stevens has guided for revenue of approximately $10 million, which would represent another sequential gain of more than 16%.

The twin catalysts reinforce the investment case for a company that now straddles both GaN and SiC technology at a time when wide-bandgap semiconductors are becoming the default choice for high-voltage, high-efficiency applications. Allexandre and Stevens are scheduled to meet institutional investors at conferences hosted by CJS Securities on May 13 (virtual) and J.P. Morgan on May 19 in Boston — events where the India partnership and the SiC customer wins are expected to be central talking points. Whether the customer feedback translates into orders before the next earnings report will be a key near-term test of whether the share-price jump has further room to run.